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PDF 2SC4793 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4793 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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1. toshiba ( NPN, Transistor )  Hay una vista previa y un enlace de descarga de 2SC4793 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC4793
Unit: mm
• High transition frequency: fT = 100 MHz (typ.)
• Complementary to 2SA1837
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
230 V
230 V
5V
1A
0.1 A
2.0
W
20
JEDEC
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4793.PDF ] | |
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