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Datasheet 2SC4738 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SC4738 | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SC4738
2SC4738 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.1 W (Tamb=25℃)
.,LCollector current
ICM: 0.15 Collector-base voltage
A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-523
1. BASE 2. EMITTER 3. COLLECTOR
ICELEC |  WEJ | transistor |
| 2 | 2SC4738 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.) • High hFE: hFE = 120~700 • C |  Toshiba Semiconductor | transistor |
| 3 | 2SC4738 | Silicon NPN Epitaxial Planar type SMD Type
Silicon NPN Epitaxial Planar type 2SC4738
Transistors
SOT-523
+0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05
Unit: mm
+0.01 0.1-0.01
2
1
+0.15 1.6-0.15
High voltage and high current:VCE=50V,IC=150mA(Max.) Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) High hFE: =120 to 700
+ |  Kexin | transistor |
| 4 | 2SC4738 | NPN TRANSISTOR 2SC4738
NPN TRANSISTOR
P b Lead(Pb)-Free
1 3 2
FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –C |  Weitron | transistor |
| 5 | 2SC4738 | NPN Plastic Encapsulated Transistor 2SC4738
Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current High DC Current Gain Complementary to 2SA1832
A
M
3
SOT-523
3
Top View
C B
1 2 2
CLASSIFICATION OF |  SeCoS | transistor |
2SC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SC0108T2Dx-xx | Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core 2SC0108T2Dx-xx Preliminary
2SC0108T2Dx-xx Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core
Abstract
The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica  CT-Concept transistor | | |
| 2 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame  Panasonic Semiconductor transistor | | |
| 3 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
| 4 | 2SC100 | NPN Transistor w
w
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e e h
U 4 t
m o .c
w
w
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t a .D
S a
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U 4 t e
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m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
 ETC transistor | | |
| 5 | 2SC1000 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
w
.d
e e h s a t a
. u t4
m o c
 Micro Electronics transistor | | |
| 6 | 2SC1000 | Silicon NPN Epitaxial Transistor ETC transistor | | |
| 7 | 2SC1002 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym  SavantIC transistor | |
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