PDF 4N39 Data sheet ( Hoja de datos )

Número de pieza	4N39
Descripción	PHOTO SCR OPTOCOUPLER
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! 4N39 PHOTO SCR OPTOCOUPLER FEATURES • Turn On Current (IFT), 5.0 mA Typical • Gate Trigger Current (IGT), 20 mA • Surge Anode Current, 10 Amp • Blocking Voltage, 200 VACPK • Gate Trigger Voltage (VGT), 0.6 Volt • Isolation Voltage, 5300 VACRMS • Solid State Reliability • Standard DIP Package • Underwriters Lab File #E52744 DESCRIPTION The 4N39 is an optically coupled SCR with a Gal- lium Arsenide infrared emitter and a silicon photo SCR sensor. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. The 4N39 can be used in SCR triac and solid state relay applications where high blocking voltages and low input current sensitivity are required. Maximum Ratings Emitter Peak Reverse Voltage ....................................6.0 V Peak Forward Current (100 µs, 1% Duty Cycle)............................. 1.0 A Continuous Forward Current ........................ 60 mA Power Dissipation at 25°C..........................100 mW Derate Linearly from 50°C .........................2 mW/°C Detector Reverse Gate Voltage .....................................6.0 V Anode Peak Blocking Voltage .......................200 V Peak Reverse Gate Voltage ...............................6 V Anode Current ............................................ 300 mA Surge Anode Current (100 µs duration) .......... 10 A Surge Gate Current (5 ms duration)........... 100 mA Power Dissipation, 25°C ambient ..............400 mW Derate Linearly from 25°C .........................8 mW/°C Package Isolation Test Voltage (1 sec.) .......... 5300 VACRMS Isolation Resistance VIO=500 V, TA=25°C ...............................≥1012 Ω VIO=500 V, TA=100°C .............................≥1011 Ω Total Package Dissipation ..........................450 mW Derate Linearly from 50°C .........................9 mW/°C Operating Temperature ................–55°C to +100°C Storage Temperature....................–55°C to +150°C Soldering Temperature (10 s.).......................260°C Package Dimensions in Inches (mm) Pin One ID. 321 Anode 1 .248 (6.30) .256 (6.50) Cathode 2 6 Gate 5 Anode .039 (1.00) min. 4° typ. .018 (0.45) .022 (0.55) 4 56 .335 (8.50) .343 (8.70) NC 3 .300 (7.62) typ. .130 (3.30) .150 (3.81) .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 18° typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) 4 Cathode .110 (2.79) .150 (3.81) Characteristics (TA=25°C) Sym- Min. Typ Max Unit Condition bol . . Emitter Forward Voltage Reverse Current Detector VF IR 1.2 1.5 V IF=20 mA 10 µA VR=5 V Forward Blocking Voltage Reverse Blocking Voltage VDM VRM 200 200 V RGK=10 KΩ TA=100°C V Id=150 µA On-state Voltage Holding Current Gate Trigger Voltage Forward Leakage Current VTM IH VGT IDM Reverse Leakage Current IRM Package 1.2 V 200 µA 0.6 1.0 V 50 µA 50 µA ITM=300 mA RGK=27 KΩ VFX=50 V VFX=100 V RGK=27 KΩ RL=10 KΩ RGK=10 KΩ VRX=200 V IF=0, TA=100°C RGK=27 KΩ VRX=200 V IF=0, TA=100°C Turn-0n Current IFT Isolation Capaci- tance 15 30 8 14 2 mA VFX=50 V RGK=10 KΩ VFX=100 V RGK=27 KΩ pF f=1 MHz 5–36 1 page

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