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4N32 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 4N32
部品説明 PHOTODARLINGTON OPTOCOUPLER
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 

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4N32 Datasheet, 4N32 PDF,ピン配置, 機能
4N32/4N33
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
• Very High Current Transfer Ratio, 500% Min.
• High Isolation Resistance, 1011 Typical
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
V
DE
VDE Approvals
#0884 (Available
with
Option 1)
DESCRIPTION
The 4N32 and 4N33 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be
achieved while maintaining a high degree of isola-
tion between driving and load circuits. These opto-
couplers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.
Maximum Ratings
Emitter
Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 55°C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage,
BVCEO .......................................................... 30 V
Emitter-Base Breakdown Voltage,
BVEBO ............................................................. 8V
Collector-Base Breakdown Voltage,
BVCBO .......................................................... 50 V
Emiter-Collector Breakdown Voltage,
BVECO ............................................................ 5 V
Collector (load) Current...............................125 mA
Power Dissipation at 25°C Ambient ...........150 mW
Derate Linearly from 25°C......................2.0 mW/°C
Package
Total Dissipation at 25°C Ambient .............250 mW
Derate Linearly from 25°C......................3.3 mW/°C
Isolation Test Voltage......................... 5300 VACRMS
Between Emitter and Detector,
Standard Climate: 23°C/50%RH,
DIN 50014
Leakage Path ........................................ 7 mm min.
Air Path................................................... 7 mm min.
Isolation Resitance
VIO=500 V/25°C ...................................... 1012
VIO=500 V/100°C .................................... 1011
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
Dimensions in inches (mm)
Pin One ID.
321
Anode 1
6 Base
.248 (6.30)
.256 (6.50)
Cathode 2
5 Collector
4 56
NC 3
4 Emitter
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.300 (7.62)
typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Electrical Characteristics (TA=25°C)
Parameter
Min. Typ.
Emitter
Forward Voltage
1.25
Reverse Current
0.1
Capacitance
25
Detector
BVCEO*
BVCBO*
BVEBO*
BVECO*
ICEO
HFE
Package
30
50
8
5 10
1.0
13K
Current Transfer Ratio
500
VCEsat
Coupling Capacitance
Turn On Time
1.0
1.5
Turn Off Time
*Indicates JEDEC registered values
Max. Unit
1.5 V
100 µA
pF
V
V
V
V
100 nA
%
V
pF
5 µs
100 µs
Condition
IF=50 mA
VR=3.0 V
VR=0 V
IC=100 µA, IF=0
IC=100 µA, IF=0
IC=100 µA, IF=0
IE=100 µA, IF=0
VCE=10 V, IF=0
IC=0.5 mA
IF=10 mA,
VCE=10 V
IC=2 mA,
IF=8 mA
VCC=10 V,
IC=50 mA
IF=200mA,
RL=180
5–1

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