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4AK27のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。 |
部品番号 | 4AK27 |
| |
部品説明 | Silicon N Channel MOS FET High Speed Power Switching | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと4AK27ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
4AK27
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A
• 4V gate drive devices.
• High density mounting
Outline
SP-10
ADE-208-728 (Z)
1st. Edition
January 1999
3
D
4
5
D
6
7
D
8
9
D
1 2 3 4 5 6 7 8 9 10
2G G G G
1, 10.
Source
1S
S 10
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
1 Page 4AK27
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
V(BR)DSS
V(BR)GSS
I DSS
I GSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
60
±20
—
—
1.0
—
—
3.0
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss
—
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
Note: 4. Pulse test
Typ
—
—
—
—
—
0.12
0.15
5.5
390
190
45
10
42
90
55
1.0
60
Max
—
—
100
±10
2.25
0.15
0.2
—
—
—
—
—
—
—
—
—
—
Unit Test Conditions
V ID = 10mA, VGS = 0
V IG = ±100µA, VDS = 0
µA VDS = 50 V, VGS = 0
µA VGS = ±16V, VDS = 0
V ID = 1mA, VDS = 10V
Ω ID = 3A, VGS = 10V Note4
Ω ID = 3A, VGS = 4V Note4
S ID = 3A, VDS = 10V Note4
pF VDS = 10V
pF VGS = 0
pF f = 1MHz
ns VGS = 10V, ID = 3A
ns RL = 10Ω
ns
ns
V IF = 5A, VGS = 0
ns IF = 5A, VGS = 0
diF/ dt =50A/µs
3
3Pages 4AK27
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25 °C
200 V GS = 0, Pulse Test
100
50
20
10
5
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I DR (A)
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
50
Crss
20 VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100 20
80 V DD = 50 V
25 V
10 V
60
VDS
40
VGS
16
12
8
I D= 5 A
20 V DD = 10 V
25 V
4
50 V
0
04
8 12 16 20
Gate Charge Qg (nc)
Switching Characteristics
500
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
200
t d(off)
100
50 t f
20 t r
t d(on)
10
5
0.1 0.2
0.5 1
2
5
Drain Current I D (A)
10
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ 4AK27 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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