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4AK17のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N-Channel Power MOS FET Array」です。 |
部品番号 | 4AK17 |
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部品説明 | Silicon N-Channel Power MOS FET Array | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと4AK17ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
4AK17
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) ≤ 0.045 , VGS = 10 V, ID = 10 A
RDS(on) ≤ 0.065 , VGS = 4 V, ID = 10 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
1 Page 4AK17
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
1.0
—
—
Typ Max Unit
— —V
— —V
—
—
—
0.033
±10
250
2.0
0.045
µA
µA
V
Ω
0.04 0.065 Ω
Forward transfer admittance |yfs|
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
10
—
—
—
—
—
—
—
—
—
17 —
1400
720
220
15
95
300
170
1.05
—
—
—
—
—
—
—
—
110 —
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A
VGS = 10 V*1
ID = 10 A
VGS = 4 V*1
ID = 10 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 10 A
VGS = 10 V
RL = 3 Ω
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0
dIF/dt = 50 A/µs
3
3Pages 4AK17
Forward Transfer Admittance
vs. Drain Current
100
VDS = 10 V
50 Pulse Test
–25°C
TC = 25°C
20
10 75°C
5
2
1
0.5 1.0 2
5 10 20
Drain Current ID (A)
50
1,000
500
200
100
Body to Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
50
20
10
0.5
1.0 2
5 10 20
Reverse Drain Current IDR (A)
50
10,000
3,000
1,000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
Crss
30
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
100
VDD = 50 V
80 25 V
10 V
60
VDS
VGS
40
20
16
12
8
20 VDD = 50 V
4
25 V
ID = 25 A
10 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ 4AK17 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
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4AK17 | Silicon N-Channel Power MOS FET Array | Hitachi Semiconductor |
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