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4AK16 の電気的特性と機能

4AK16のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N-Channel Power MOS FET Array」です。


製品の詳細 ( Datasheet PDF )

部品番号 4AK16
部品説明 Silicon N-Channel Power MOS FET Array
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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4AK16 Datasheet, 4AK16 PDF,ピン配置, 機能
4AK16
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance
RDS(on) 0.18 , VGS = 10 V, ID = 5 A
RDS(on) 0.25 , VGS = 4 V, ID = 5 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for motor driver, solenoid driver and lamp driver

1 Page





4AK16 pdf, ピン配列
4AK16
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Typ
0.12
0.17
Max
±10
250
2.0
0.18
0.25
Forward transfer admittance |yfs|
3.5 6.0 —
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
400 —
220 —
60 —
5—
55 —
140 —
90 —
1.0 —
100 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A
VGS = 10 V*1
ID = 5 A
VGS = 4 V*1
ID = 5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5 A
VGS = 10 V
RL = 6
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0
dIF/dt = 50 A/µs
3


3Pages


4AK16 電子部品, 半導体
4AK16
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
20 Pulse Test
10
TC = 25°C
–25°C
5
75°C
2
1.0
0.5
0.1
0.2 0.5 1.0 2
Drain Current ID (A)
5
10
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
200 Pulse Test
100
50
20
10
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current IDR (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f =1MHz
1000
300
100
30
Ciss
Coss
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
100 20
80
60
VDS
VDD = 50 V
25 V
10 V
16
12
40
VDD = 50 V
VGS
8
20
25 V
10 V
ID = 10 A
4
0
0 4 8 12 16 20
Gate Charge Qg (nc)
6

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


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