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5DL2C41A の電気的特性と機能

5DL2C41AのメーカーはToshiba Semiconductorです、この部品の機能は「SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK」です。


製品の詳細 ( Datasheet PDF )

部品番号 5DL2C41A
部品説明 SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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5DL2C41A Datasheet, 5DL2C41A PDF,ピン配置, 機能
5DL2C41A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
5DL2C41A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
l Repetitive Peak Reverse Voltage
l Average Output Rectified Current
l Ultra Fast Reverse-Recovery Time
: VRRM = 200V
: IO = 5A
: trr = 35ns
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified Current
(Tc = 126°C)
Peak One Cycle Surge Forward
Current (Non Repetitive)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
VRRM
IO
IFSM
Tj
Tstg
RATING
200
5
25 (50Hz)
40~150
40~150
0.6
UNIT
V
A
A
°C
°C
N·m
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 2.0 g
TO-220AB
1210E1A
CHARACTERISTIC
Peak Forward Voltage
(Note 1)
Repetitive Peak Reverse Current
(Note 1)
Reverse Recovery time
(Note 1)
Forward Recovery time
(Note 1)
Thermal Resistance
Note 1: A value of one cell.
SYMBOL
TEST CONDITION
VFM
IFM = 2.5A
IRRM
VRRM = 200V
trr
tfr
Rth (jc)
IF = 2A, di / dt = 20A / µs
IF = 1.0A
DC Total, Junction to Case
TYP. MAX UNIT
0.98 V
10 µA
35 ns
100 ns
4.0 °C / W
POLARITY
MARKING
* 1 MARK
*2 A
5DL2C
*3
1 2001-07-13

1 Page





5DL2C41A pdf, ピン配列
5DL2C41A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
3 2001-07-13


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共有リンク

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部品番号部品説明メーカ
5DL2C41A

SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK

Toshiba Semiconductor
Toshiba Semiconductor


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