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PDF 5962R9675501VXC Data sheet ( Hoja de datos )

Número de pieza 5962R9675501VXC
Descripción Radiation Hardened High Speed/ Monolithic Digital-to-Analog Converter
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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Semiconductor
HS-565ARH
March 1996
Radiation Hardened High Speed,
Monolithic Digital-to-Analog Converter
Features
Description
• Devices QML Qualified in Accordance with
MIL-PRF-38535
• Detailed Electrical and Screening Requirements
are Contained in SMD# 5962-96755 and Harris’ QM
Plan
• DAC and Reference on a Single Chip
• Pin Compatible with AD-565A and HI-565A
• Very High Speed: Settles to 0.50 LSB in 500ns Max
• Monotonicity Guaranteed Over Temperature
• 0.50 LSB Max Nonlinearity Guaranteed Over
Temperature
• Low Gain Drift (Max., DAC Plus Reference) 50ppm/oC
The HS-565ARH is a fast, radiation hardened 12-bit current out-
put, digital-to-analog converter. The monolithic chip includes a
precision voltage reference, thin-film R-2R ladder, reference
control amplifier and twelve high-speed bipolar current
switches.
The Harris Semiconductor Dielectric Isolation process provides
latch-up free operation while minimizing stray capacitance and
leakage currents, to produce an excellent combination of speed
and accuracy. Also, ground currents are minimized to produce a
low and constant current through the ground terminal, which
reduces error due to code-dependent ground currents.
HS-565ARH die are laser trimmed for a maximum integral nonlin-
earity error of ±0.25 LSB at +25oC. In addition, the low noise bur-
ied zener reference is trimmed both for absolute value and mini-
mum temperature coefficient.
• Total Dose Hardness to 100K RAD
±0.75 LSB Accuracy Guaranteed Over Temperature
(±0.125 LSB Typical at +25oC)
Applications
• High Speed A/D Converters
• Precision Instrumentation
• Signal Reconstruction
Functional Diagram
REF OUT VCC
43
+
-
REF 6 19.95K
IN
REF 5
GND
10V
IREF
0.5mA
3.5K
+
-
3K
BIP.
OFF.
8
9.95K
DAC
IO
(4X IREF
X CODE)
11 20V
SPAN
5K
10 10V
SPAN
5K
9
OUT
2.5K
7 12
-VEE PWR 24 . . . 13
GND MSB LSB
Ordering Information
PART NUMBER
5962R9675501VJC
5962R9675501VXC
HS1-565ARH (SAMPLE)
HS9-565ARH (SAMPLE)
TEMPERATURE RANGE
-55oC to +125oC
-55oC to +125oC
+25oC
+25oC
SCREENING LEVEL
MIL-PRF-38535 Level V
MIL-PRF-38535 Level V
Sample
Sample
PACKAGE
24 Lead SBDIP
24 Lead Ceramic Flatpack
24 Lead SBDIP
24 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1996
1
Spec Number 518795
File Number 3278.2

1 page




5962R9675501VXC pdf
Specifications HS-565ARH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETERS
Settling Time (Note 3)
SYMBOL
CONDITIONS
TS1 VSSD = VSSA = 0V,
VCC = +15V, VEE = -15V,
High Z External Load
TS2 VSSD = VSSA = 0V,
VCC = +15V, VEE = -15V,
75External Load
NOTES
1
1
TEMPERATURE MIN TYP MAX UNITS
-55oC to +125oC - 350 500 ns
-55oC to +125oC - 150 250 ns
Full Scale Transition
Rise Time
Fall Time
TRISE VSSD = VSSA = 0V,
VCC = +15V, VEE = -15V
1
-55oC to +125oC
-
15 30
ns
TFALL VSSD = VSSA = 0V,
1
-55oC to +125oC
-
30 60
ns
VCC = +15V, VEE = -15V
NOTES:
1. The parameters listed in Table 3 are controlled via design or process and are not tested. These parameters are characterized upon initial
design release.
2. 24 lead DIP package only.
3. Reference the Settling Time discussion and Figure 3.
TABLE 4. POST 100 K RAD ELECTRICAL PERFORMANCE
Post 100K RAD Electrical Performance Is Per Table 1 (+25oC Only) Except As Follows:
PARAMETER
SYMBOL
CONDITIONS: +25oC ONLY
LIMITS
MIN MAX
DIGITAL INPUTS
Low Current
Low Voltage
High Voltage
UNIPOLAR
IIL VIN = 0.0V
VIL (Note 1)
VIH (Note 1)
-40 -
- 0.5
2.5 -
Full Scale Error
BIPOLAR
AE Figure 3, R2 = 50Fixed
- ±0.85
Offset Error
BPOE
Figure 4, R3 and R4 = 50Fixed
Zero Error
BPZE
Figure 5, R3 and R4 = 50Fixed
Full Scale Error
BPAE
Figure 5, R3 and R4 = 50Fixed
Differential Nonlinearity
DLE Monotonicity Guaranteed
Accuracy
ILE Error Relative to Full Scale
NOTES:
1. This parameter is an applied condition of test.
-
-
-
-
-
±0.25
±0.25
±0.85
±1.0
±1.0
UNITS
µA
V
V
% of F.S.
% of F.S
% of F.S.
% of F.S.
LSB
LSB
TABLE 5. BI DELTA PARAMETERS (±25oC)
PARAMETER
ICC
IEE
IOUT1
IOUT2
VOS
AE
BPOE
BPZE
IIL
IIH
DELTA LIMIT
±1.18mA
±1.45mA
±240µA
±240µA
±0.02%
±0.15%
±0.10%
±0.10%
±1.0µA
±40nA
Spec Number 518795
5

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