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E35A21VBR PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 E35A21VBR
部品説明 STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)
メーカ KEC(Korea Electronics)
ロゴ KEC(Korea Electronics) ロゴ 



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E35A21VBR Datasheet, E35A21VBR PDF,ピン配置, 機能
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=35A.
Zener Voltage : 21V(Typ.)
POLARITY
E35A21VBS (+ Type) : Mark : ZG
E35A21VBR (- Type) : Mark : ZA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Peak
Reverse Surge Current
(10mS)
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
IF(AV)
IFSM
IRSM
VRSM
VRM
Tj
Tstg
RATING
35
300 (60Hz)
42
19
16
-40 215
-40 215
UNIT
A
A
A
V
V
E35A21VBS, E35A21VBR
STACK SILICON DIFFUSED DIODE
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Zener Voltage
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
VF
VZ
IR
VF
Vbr
T
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IZ=10mA
VR=18V
IFM=100A, IM=100mA, Pw=100mS
Irsm=42A, Pw=10mS
IZ=10mA
Ta=150 , VR=18V
DC total junction to case
MIN.
-
19
-
-
-
-
-
-
TYP.
-
21
-
-
-
15.7
-
-
MAX.
1.10
23
1
70
32
-
UNIT
V
V
V
mV
V
mV/
100 A
0.8 /W
2002. 4. 16
Revision No : 4
1/1

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