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FQP55N06 の電気的特性と機能

FQP55N06のメーカーはFairchild Semiconductorです、この部品の機能は「60V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQP55N06
部品説明 60V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQP55N06 Datasheet, FQP55N06 PDF,ピン配置, 機能
FQP55N06
60V N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 55A, 60V, RDS(on) = 0.020@VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP55N06
60
55
38.9
220
± 25
545
55
13.3
7.0
133
0.89
-55 to +175
300
Typ Max
-- 1.13
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

1 Page





FQP55N06 pdf, ピン配列
Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
V , Drain-Source Voltage [V]
DS
101
Figure 1. On-Region Characteristics
50
40
V = 10V
GS
30
V = 20V
GS
20
10
Note : TJ = 25
0
0 50 100 150 200
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4000
3000
2000
C
oss
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
Notes :
1. V = 0 V
GS
2. f =1 MHz
1000
C
rss
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
-55
Notes :
1. V = 25V
2. 25DS0μ s Pulse Test
100
2 4 6 8 10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 V = 30V
DS
V = 48V
DS
8
6
4
2
Note : ID = 55A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001


3Pages


FQP55N06 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQP55N06

60V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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