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FQP4P25のメーカーはFairchild Semiconductorです、この部品の機能は「250V P-Channel MOSFET」です。 |
部品番号 | FQP4P25 |
| |
部品説明 | 250V P-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQP4P25ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FQP4P25
250V P-Channel MOSFET
December 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
Features
• -4.0A, -250V, RDS(on) = 2.1Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G!
S
!
●
●
▶▲
●
!
D
FQP4P25
-250
-4.0
-2.53
-16
± 30
280
-4.0
7.5
-5.5
75
0.6
-55 to +150
300
Typ Max
-- 1.67
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
1 Page Typical Characteristics
101 Top :
V
GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100 Bottom : -5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100 101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = - 10V
GS
V = - 20V
GS
4
2
※ Note : TJ = 25℃
0
0 3 6 9 12
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = -50V
2. 250μs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -50V
DS
10 V = -125V
DS
VDS = -200V
8
6
4
2
※ Note : ID = -4.0 A
0
0 2 4 6 8 10 12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
IFM , Body Diode Forward Current
VSD
di/dt
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FQP4P25 | 250V P-Channel MOSFET | Fairchild Semiconductor |