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FQP1P50 の電気的特性と機能

FQP1P50のメーカーはFairchild Semiconductorです、この部品の機能は「500V P-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQP1P50
部品説明 500V P-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQP1P50 Datasheet, FQP1P50 PDF,ピン配置, 機能
FQP1P50
500V P-Channel MOSFET
June 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complementary
half bridge.
Features
• -1.5A, -500V, RDS(on) = 10.5@VGS = -10 V
• Low gate charge ( typical 11 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G!
S
!
▶▲
!
D
FQP1P50
-500
-1.5
-0.95
-6.0
± 30
110
-1.5
6.3
-4.5
63
0.51
-55 to +150
300
Typ Max
-- 1.98
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, June 2000

1 Page





FQP1P50 pdf, ピン配列
Typical Characteristics
Top :
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
100 -6.5 V
-6.0 V
Bottom : -5.5 V
10-1
10-2
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25
100 101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
16
14
V = - 10V
GS
12
V = - 20V
GS
10
8
Note : TJ = 25
6
01234
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400
Ciss
300
C
oss
200 Notes :
1. VGS = 0 V
C 2. f = 1 MHz
rss
100
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
100
10-1
2
150
25
-55
Notes :
1. VDS = -50V
2. 250μs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.0
15025
Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -100V
10 DS
V = -250V
DS
8 V = -400V
DS
6
4
2
Note : ID = -1.5 A
0
0 2 4 6 8 10 12
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, June 2000


3Pages


FQP1P50 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
IFM , Body Diode Forward Current
VSD
di/dt
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD
©2000 Fairchild Semiconductor International
Rev. A, June 2000

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQP1P50

500V P-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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