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FQP18N20V2 の電気的特性と機能

FQP18N20V2のメーカーはFairchild Semiconductorです、この部品の機能は「200V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQP18N20V2
部品説明 200V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQP18N20V2 Datasheet, FQP18N20V2 PDF,ピン配置, 機能
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 18A, 200V, RDS(on) = 0.14@VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
D
!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQP18N20V2 FQPF18N20V2
200
18 18
11.9 11.9
72 72
± 30
340
18
12.3
6.5
123 40
0.99
0.32
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N20V2
1.01
0.5
62.5
FQPF18N20V2
3.1
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002

1 Page





FQP18N20V2 pdf, ピン配列
Typical Characteristics
Top :
V
GS
15.0 V
10.0 V
101 8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.5
0.4 VGS = 10V
0.3 VGS = 20V
0.2
0.1
0.0
0
Note : T = 25
J
10 20 30 40 50 60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
C
iss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101 150
25
100
-55
10-1
4
Notes :
1.
2.
2V5DS0μ=s40PVulse
Test
56789
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
V , Source-Drain Voltage [V]
SD
1.6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 40V
DS
10 V = 100V
DS
V = 160V
DS
8
6
4
2
Note : ID = 18A
0
0 5 10 15 20 25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, August 2002


3Pages


FQP18N20V2 電子部品, 半導体
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQP18N20V2

200V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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