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FQP12N60 の電気的特性と機能

FQP12N60のメーカーはFairchild Semiconductorです、この部品の機能は「600V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQP12N60
部品説明 600V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQP12N60 Datasheet, FQP12N60 PDF,ピン配置, 機能
FQP12N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP12N60
600
10.5
6.7
42
±30
790
10.5
18
4.5
180
1.43
-55 to +150
300
Typ Max
-- 0.7
0.5 --
-- 62.5
©2000 Fairchild Semiconductor International
Units
V
A
A
A
V
mJ
A
mJ
Vns
W
W/°C
°C
°C
Units
°CW
°CW
°CW
Rev. A, April 2000

1 Page





FQP12N60 pdf, ピン配列
Typical Characteristics
Top :
1V5GVS
10 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
 Notes :
1. 250s Pulse Test
2. TC = 25
100 101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.8
1.6
1.4 VGS = 10V
1.2 VGS = 20V
1.0
0.8
0.6
0.4
0.2
0.0
0 5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2400
1800
1200
600
Ciss
Coss
Crss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
 Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150
25
100
-55
10-1
2
 Notes :
1. V = 50V
DS
2. 250s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150 25
 Notes :
1. V = 0V
GS
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
 Note : ID = 12 A
0
0 5 10 15 20 25 30 35 40 45
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000


3Pages


FQP12N60 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2000 Fairchild Semiconductor International
Rev. A, April 2000

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQP12N60

600V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
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12A N-Channel MOSFET

Oucan Semi
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N-Channel MOSFET

TOBA
TOBA


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