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FQP12N20LのメーカーはFairchild Semiconductorです、この部品の機能は「200V LOGIC N-Channel MOSFET」です。 |
部品番号 | FQP12N20L |
| |
部品説明 | 200V LOGIC N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQP12N20Lダウンロード(pdfファイル)リンクがあります。 Total 8 pages
February 2001
FQP12N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
G DS
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP12N20L
200
11.6
7.35
46.4
± 20
210
11.6
9.0
5.5
90
0.72
-55 to +150
300
Typ Max
-- 1.39
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
1 Page Typical Characteristics
Top :
V
GS
10 V
8.0 V
6.0 V
101
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.2
VGS = 5 V
0.9
V = 10V
GS
0.6
0.3
0.0
0
6 12 18 24 30 36
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1800
1500
1200
900
600
300
0
10-1
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
iss
C
oss
C
rss
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 100V
DS
8
V = 160V
DS
6
4
2
※ Note : ID = 11.6 A
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, February 2001
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ FQP12N20L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FQP12N20 | 200V LOGIC N-Channel MOSFET | Fairchild Semiconductor |
FQP12N20L | 200V LOGIC N-Channel MOSFET | Fairchild Semiconductor |