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Número de pieza | FQAF19N60 | |
Descripción | 600V N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQAF19N60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FQAF19N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 11.2A, 600V, RDS(on) = 0.38 Ω @ VGS = 10 V
• Low gate charge ( typical 70 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3PF
FQAF Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQAF19N60
600
11.2
7.0
44.8
±30
1150
11.2
12
4.5
120
0.96
-55 to +150
300
Typ Max
-- 1.04
-- 40
Units
V
A
A
A
V
mJ
A
mJ
Vns
W
W/°C
°C
°C
Units
°CW
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000
1 page Gate Charge Test Circuit & Waveform
50K
Same Type
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2000 Fairchild Semiconductor International
Rev. A, April 2000
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FQAF19N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQAF19N60 | 600V N-Channel MOSFET | Fairchild Semiconductor |
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