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FQA47P06 の電気的特性と機能

FQA47P06のメーカーはFairchild Semiconductorです、この部品の機能は「60V P-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA47P06
部品説明 60V P-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA47P06 Datasheet, FQA47P06 PDF,ピン配置, 機能
FQA47P06
60V P-Channel MOSFET
May 2001
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -55A, -60V, RDS(on) = 0.026@VGS = -10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G!
G DS
TO-3P
FQA Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
!
▶▲
!
D
FQA47P06
-60
-55
-38.9
-220
± 25
820
-55
21.4
-7.0
214
1.43
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.7
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001

1 Page





FQA47P06 pdf, ピン配列
Typical Characteristics
Top :
102
V
GS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.10
0.08
V = - 10V
0.06
GS
0.04
V = - 20V
GS
0.02
0.00
0
Note : T = 25
J
100 200 300
-I , Drain Current [A]
D
400
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8000
7000
6000
5000
4000
3000
2000
1000
0
10-1
Coss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
102
101 175
25
100
10-1
2
-55
Notes :
1. VDS = -30V
2. 250μ s Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
102
101
100
17525
Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8 V = -48V
DS
6
4
2
Note : ID = -47 A
0
0 10 20 30 40 50 60 70 80 90
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001


3Pages


FQA47P06 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
IFM , Body Diode Forward Current
VSD
di/dt
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQA47P06

60V P-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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