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M27C1001-10XC1X の電気的特性と機能

M27C1001-10XC1XのメーカーはSTMicroelectronicsです、この部品の機能は「1 Mbit 128Kb x8 UV EPROM and OTP EPROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 M27C1001-10XC1X
部品説明 1 Mbit 128Kb x8 UV EPROM and OTP EPROM
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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M27C1001-10XC1X Datasheet, M27C1001-10XC1X PDF,ピン配置, 機能
M27C1001
1 Mbit (128Kb x8) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME: 35ns
s LOW POWER CONSUMPTION:
– Active Current 30mA at 5Mhz
– Standby Current 100µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 100µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 05h
DESCRIPTION
The M27C1001 is a 1 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systems requiring large programs and
is organized as 131,072 words of 8 bits.
The FDIP32W (window ceramic frit-seal package)
and the LCCC32W (leadless chip carrier package)
have a transparent lids which allow the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C1001 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
32
1
FDIP32W (F)
32
1
PDIP32 (B)
LCCC32W (L)
PLCC32 (K)
Figure 1. Logic Diagram
TSOP32 (N)
8 x 20 mm
VCC VPP
17
A0-A16
8
Q0-Q7
P M27C1001
E
G
VSS
AI00710B
January 2000
1/17

1 Page





M27C1001-10XC1X pdf, ピン配列
M27C1001
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
VCC Supply Voltage
–2 to 7
V
VA9 (2)
A9 Voltage
–2 to 13.5
V
VPP Program Supply Voltage
–2 to 14
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = VIH or VIL, VID = 12V ± 0.5V.
E
VIL
VIL
VIL
VIL
VIH
VIH
VIL
G P A9 VPP Q7-Q0
VIL X
X VCC or VSS Data Out
VIH X
X
VCC or VSS
Hi-Z
VIH VIL Pulse
X
VPP Data In
VIL VIH X VPP Data Out
X X X VPP Hi-Z
X
X
X
VCC or VSS
Hi-Z
VIL
VIH
VID
VCC
Codes
Table 4. Electronic Signature
Ide ntifie r
A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH 0 0 0 0 0 1 0 1
05h
3/17


3Pages


M27C1001-10XC1X 電子部品, 半導体
M27C1001
Table 8B. Read Mode AC Characteristics (1)
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
M27C1001
Symbol Alt
Parameter
Test Condition
-80
-90
-10
-12/-15/
-20/-25
Unit
Min Max Min Max Min Max Min Max
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
80
90 100 120 ns
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
80 90 100 120 ns
tGLQV
tOE
Output Enable Low
to Output Valid
E = VIL
40 45 50 60 ns
tEHQZ (2)
tDF
Chip Enable High to
Output Hi-Z
G = VIL
0 30 0 30 0 30 0 40 ns
tGHQZ (2)
tDF
Output Enable High
to Output Hi-Z
E = VIL
0 30 0 30 0 30 0 40 ns
tAXQX
tOH
Address Transition
to Output Transition
E = VIL, G = VIL
0
0
0
0
ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
A0-A16
E
G
Q0-Q7
VALID
tAVQV
tGLQV
tELQV
tAXQX
VALID
tEHQZ
tGHQZ
Hi-Z
AI00713B
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
the transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output. The associated transient voltage peaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1µF ceram-
ic capacitor be used on every device between VCC
and VSS. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7µF bulk electrolytic capacitor should be
used between VCC and VSS for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
6/17

6 Page



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部品番号部品説明メーカ
M27C1001-10XC1TR

1 Mbit 128Kb x8 UV EPROM and OTP EPROM

STMicroelectronics
STMicroelectronics
M27C1001-10XC1X

1 Mbit 128Kb x8 UV EPROM and OTP EPROM

STMicroelectronics
STMicroelectronics


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