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M2716 の電気的特性と機能

M2716のメーカーはSTMicroelectronicsです、この部品の機能は「NMOS 16K 2K x 8 UV EPROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 M2716
部品説明 NMOS 16K 2K x 8 UV EPROM
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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M2716 Datasheet, M2716 PDF,ピン配置, 機能
M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION
525mW Max ACTIVE POWER, 132mW Max
STANDBY POWER
ACCESS TIME:
– M2716-1 is 350ns
– M2716 is 450ns
SINGLE 5V SUPPLY VOLTAGE
STATIC-NO CLOCKS REQUIRED
INPUTS and OUTPUTS TTL COMPATIBLE
DURING BOTH READ and PROGRAM
MODES
THREE-STATE OUTPUT with TIED-OR-
CAPABILITY
EXTENDED TEMPERATURE RANGE
PROGRAMMING VOLTAGE: 25V
24
1
FDIP24W (F)
Figure 1. Logic Diagram
DESCRIPTION
The M2716 is a 16,384 bit UV erasable and elec-
trically programmable memory EPROM, ideally
suited for applications where fast turn around and
pattern experimentation are important require-
ments.
The M2716 is housed in a 24 pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
Table 1. Signal Names
A0 - A10
Q0 - Q7
EP
G
VPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable / Program
Output Enable
Program Supply
Supply Voltage
Ground
VCC VPP
11
A0-A10
8
Q0-Q7
EP M2716
G
VSS
AI00784B
July 1994
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1 Page





M2716 pdf, ピン配列
M2716
DEVICE OPERATION (cont’d)
pulse width between 45ms and 55ms. Multiple
pulses are not needed but will not cause device
damage. No pins should be left open. A high level
(VIH or higher) must not be maintained longer than
tPHPL (max) on the program pin during program-
ming. M2716’s may be programmed in parallel in
this mode.
Program Verify Mode. The programming of the
M2716 may be verified either one byte at a time
during the programming (as shown in Figure 6) or
by reading all of the bytes out at the end of the
programming sequence. This can be done with
VPP = 25V or 5V in either case. VPP must be at 5V
for all operating modes and can be maintained at
25V for all programming modes.
Program Inhibit Mode. The program inhibit mode
allows several M2716’s to be programmed simul-
taneously with different data for each one by con-
trolling which ones receive the program pulse. All
similar inputs of the M2716 may be paralleled.
Pulsing the program pin (from VIL to VIH) will pro-
gram a unit while inhibiting the program pulse to a
unit will keep it from being programmed and keep-
ing G = VIH will put its outputs in the Hi-Z state.
ERASURE OPERATION
The M2716 is erased by exposure to high intensity
ultraviolet light through the transparent window.
This exposure discharges the floating gate to its
initial state through induced photo current. It is
recommended that the M2716 be kept out of direct
sunlight. The UV content of sunlight may cause
a partial erasure of some bits in a relatively short
period of time.
An ultraviolet source of 2537 Å yielding a total
integrated dosage of 15 watt-seconds/cm2 power
rating is used. The M2716 to be erased should be
placed 1 inch away from the lamp and no filters
should be used.
An erasure system should be calibrated peri-
odically. The erasure time is increased by the
square of the distance (if the distance is doubled
the erasure time goes up by a factor of 4). Lamps
lose intensity as they age, it is therefore important
to periodically check that the UV system is in good
order.
This will ensure that the EPROMs are being com-
pletely erased. Incomplete erasure will cause
symptoms that can be misleading. Programmers,
components, and system designs have been erro-
neously suspected when incomplete erasure was
the basic problem.
Table 3. Operating Modes
Mode
Read
Program
Verify
Program Inhibit
Deselect
Standby
Note: X = VIH or VIL.
EP
VIL
VIH Pulse
VIL
VIL
X
VIH
G VPP Q0 - Q7
VIL VCC Data Out
VIH VPP Data In
VIL
VPP or VCC
Data Out
VIH VPP Hi-Z
VIH VCC Hi-Z
X VCC Hi-Z
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3Pages


M2716 電子部品, 半導体
M2716
Table 8. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 5V ± 5%; VPP = 25V ± 1V)
Symbol Alt
Parameter
Test Condition
Min
tAVPH
tAS Address Valid to Program High
G = VIH
2
tQVPH
tDS Input Valid to Program High
G = VIH
2
tGHPH
tOS Output Enable High to Program
High
2
tPL1PL2
tPR Program Pulse Rise Time
5
tPH1PH2
tPF Program Pulse Fall Time
5
tPHPL
tPW Program Pulse Width
45
tPLQX
tDH Program Low to Input Transition
2
tPLGX
tOH Program Low to Output Enable
Transition
2
tGLQV
tOE Output Enable to Output Valid
EP = VIL
tGHQZ
tDF Output Enable High to Output Hi-Z
0
tPLAX
tAH Program Low to Address Transition
2
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
Figure 6. Programming and Verify Modes AC Waveforms
Max Units
µs
µs
µs
ns
ns
55 ms
µs
µs
120 ns
100 ns
µs
A0-A10
Q0-Q7
G
EP
tAVPH
DATA IN
tQVPH
VALID
tPLAX
tPLQX
tPLGX
DATA OUT
tGHPH
tGLQV
tGHQZ
tPHPL
PROGRAM
VERIFY
AI00787
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6 Page



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