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M27128A-25F6 の電気的特性と機能

M27128A-25F6のメーカーはSTMicroelectronicsです、この部品の機能は「NMOS 128K 16K x 8 UV EPROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 M27128A-25F6
部品説明 NMOS 128K 16K x 8 UV EPROM
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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M27128A-25F6 Datasheet, M27128A-25F6 PDF,ピン配置, 機能
M27128A
NMOS 128K (16K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5 V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
28
1
FDIP28W (F)
DESCRIPTION
The M27128A is a 131,072 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 16,384 words by 8 bits.
The M27128A is housed in a 28 Pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new
pattern can then be written to the device by follow-
ing the programming procedure.
Figure 1. Logic Diagram
VCC VPP
14
A0-A13
8
Q0-Q7
Table 1. Signal Names
A0 - A13
Q0 - Q7
E
G
P
VPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable
Output Enable
Program
Program Supply
Supply Voltage
Ground
P M27128A
E
G
VSS
AI00769B
March 1995
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M27128A-25F6 pdf, ピン配列
M27128A
DEVICE OPERATION (cont’d)
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
control bus.
This ensures that all deselected memory devices
are in their low power standby mode and that the
output pins are only active when data is required
from a particular memory device.
System Considerations
The power switching characteristics of fast
EPROMs require careful decoupling of the devices.
The supply current, ICC, has three segments that
are of interest to the system designer: the standby
current level, the active current level, and transient
current peaks that are produced by the falling and
rising edges of E. The magnitude of this transient
current peaks is dependent on the capacitive and
inductive loading of the device at the output. The
associated transient voltage peaks can be sup-
pressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7µF bulk electrolytic capacitor should be used
between VCC and GND for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPPROM), all bits of the M27128A are in the “1"
state. Data is introduced by selectively program-
ming ”0s" into the desired bit locations. Although
only “0s” will be programmed, both “1s” and “0s”
can be present in the data word. The only way to
change a “0" to a ”1" is by ultraviolet light erasure.
The M27128A is in the programming mode when
VPP input is at 12.5V and E and P are at TTL low.
The data to be programmed is applied 8 bits in
parallel, to the data output pins. The levels required
for the address and data inputs are TTL.
Fast Programming Algorithm
Fast Programming Algorithm rapidly programs
M27128A EPROMs using an efficient and reliable
method suited to the production programming en-
vironment. Programming reliability is also ensured
as the incremental program margin of each byte is
Table 3. Operating Modes
Mode
E
Read
VIL
Output Disable
VIL
Program
VIL
Verify
VIL
Program Inhibit
VIH
Standby
VIH
Electronic Signature
VIL
Note: X = VIH or VIL, VID = 12V ± 0.5%.
G P A9
VIL VIH
X
VIH VIH
X
VIH VIL Pulse
X
VIL VIH
X
XXX
XXX
VIL VIH VID
VPP Q0 - Q7
VCC Data Out
VCC Hi-Z
VPP Data In
VPP Data Out
VPP Hi-Z
VCC Hi-Z
VCC Codes Out
Table 4. Electronic Signature
Identifier
A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH 1 0 0 0 1 0 0 1
89h
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3Pages


M27128A-25F6 電子部品, 半導体
M27128A
Table 8. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 6V ± 0.25V; VPP = 12.5V ± 0.3V)
Symbol
Parameter
Test Condition
Min
Max
ILI Input Leakage Current
VIL VIN VIH
±10
ICC Supply Current
100
IPP Program Current
E = VIL
50
VIL Input Low Voltage
–0.1 0.8
VIH Input High Voltage
2 VCC + 1
VOL Output Low Voltage
IOL = 2.1mA
0.45
VOH Output High Voltage
IOH = –400µA
2.4
VID A9 Voltage
11.5
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
12.5
Unit
µA
mA
mA
V
V
V
V
V
Table 9. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6V ± 0.25V; VPP = 12.5V ± 0.3V)
Symbol Alt
Parameter
Test Condition
Min Max Unit
tAVPL
tAS Address Valid to Program Low
2 µs
tQVPL
tDS Input Valid to Program Low
2 µs
tVPHPL
tVPS VPP High to Program Low
2 µs
tVCHPL
tVCS VCC High to Program Low
2 µs
tELPL
tCES
Chip Enable Low to Program
Low
2 µs
tPLPH
tPW Program Pulse Width (Initial)
Note 2
0.95 1.05
ms
tPLPH
tOPW
Program Pulse Width
(Overprogram)
Note 3
2.85 78.75
ms
tPHQX
tDH
Program High to Input
Transition
2 µs
tQXGL
tOES
Input Transition to Output
Enable Low
2 µs
tGLQV
tOE
Output Enable Low to
Output Valid
150 ns
tGHQZ (4)
tDFP
Output Enable High to
Output Hi-Z
0 130 ns
tGHAX
tAH
Output Enable High to
Address Transition
0 ns
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. The Initial Program Pulse width tolerance is 1 ms ± 5%.
3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.
4. Sampled only, not 100% tested.
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部品番号部品説明メーカ
M27128A-25F1

NMOS 128K 16K x 8 UV EPROM

STMicroelectronics
STMicroelectronics
M27128A-25F6

NMOS 128K 16K x 8 UV EPROM

STMicroelectronics
STMicroelectronics


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