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PDF EPA120E Data sheet ( Hoja de datos )
| Número de pieza | EPA120E | |
| Descripción | High Efficiency Heterojunction Power FET | |
| Fabricantes | ETC | |
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Excelics
EPA120E
DATA SHEET
High Efficiency Heterojunction Power FET
• +29.5dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN AT 18GHz
• 0.3 X 1200 MICRON RECESSED
“MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE
40
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
830
50 116
DDD
D
S GS GSGSG S
95 45 80
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
48
320
100
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
28.0 29.5
29.5
10.0 12.0
9.5
46
dBm
dB
%
Idss Saturated Drain Current Vds=3V, Vgs=0V
210 360 510 mA
Gm
Transconductance
Vds=3V, Vgs=0V
240 380
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=3.5mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-12 -15
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7 -14
V
Rth Thermal Resistance (Au-Sn Eutectic Attach)
35 oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids Drain Current
Idss
405mA
Igsf
Forward Gate Current
60mA
10mA
Pin Input Power
27dBm
Tch
Channel Temperature
175oC
Tstg
Storage Temperature
-65/175oC
@3dB Compression
150oC
-65/150oC
Pt Total Power Dissipation 3.9W
3.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EPA120E.PDF ] | |
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