FA01219A Datasheet PDF - Mitsubishi Electric Semiconductor
| Part Number | FA01219A | |
| Description | GaAs FET HYBRID IC | |
| Manufacturers | Mitsubishi Electric Semiconductor | |
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There is a preview and FA01219A download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band
small size handheld radio.
FEATURES
• Low voltage
• High gain
• High efficiency
• High power
3.5V
22.5B
50%
30.5dBm
APPLICATION
PDC0.8GHz
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
GND
18
27
36
45
GND
10.0
Unit:mm
0.8
2.0
6.0
tolerance:±0.2
1 RF INPUT
2 VD1
3 GND
4 VD2
5 RF OUTPUT
6 GND
7 GND
8 VG1,2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Condition
Tc
VD
Pin
TC(op)
Tstg
Drain voltage
Input power
Operation case temperature
Storage temperature
Po≤30.5dBm
ZG=ZL=50Ω
25˚C
25˚C
–
–
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS(Ta=25˚C)
Symbol
Parameter
f
Pin
IDt
ρin
ACP50
ACP100
2fo
3fo
Frequency
Input power
Po=30.5dBm
Total drain current
VD1=VD2=3.5V
Return loss
VG1,2=-2.5V
±50kHz adjacent channel power ZG=ZL=50Ω
±100kHz adjacent channel power (π/4DQPSK)
2nd harmonics
3rd harmonics
Ditto
(CW)
Test conditions
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
˚C
˚C
Limits
Min Typ Max
Unit
925 – 958 MHz
–5
8 dBm
– 640 720 mA
– – -6 dB
– – -47 dBc
– – -62 dBc
– – -30 dBc
– – -30 dBc
Nov. ´97
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FA01219A electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FA01219A.PDF Datasheet ] | |
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