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F2001 の電気的特性と機能

F2001のメーカーはPolyfet RF Devicesです、この部品の機能は「PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 F2001
部品説明 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
メーカ Polyfet RF Devices
ロゴ Polyfet RF Devices ロゴ 




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F2001 Datasheet, F2001 PDF,ピン配置, 機能
polyfet rf devices
F2001
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
2.5 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
20 Watts
10 oC/W
200 oC
-65 oC to 150oC
0.8 A
70 V
70 V 30V
RF CHARACTERISTICS ( 2.5WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 0.2 A, Vds = 28.0 V, F = 1000 MHz
η Drain Efficiency
45 % Idq = 0.2 A, Vds = 28.0 V, F = 1000 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.2 A, Vds = 28.0 V, F = 1000 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.01 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.2 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.02 A, Vgs = Vds
gM Forward Transconductanc
0.2
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
3.5
Ohm
Vgs = 20V, Ids = 1A
Idsat
Saturation Curren
1.2
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
9 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
1 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
6 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com

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部品番号部品説明メーカ
F2001

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices
Polyfet RF Devices
F2002

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices
Polyfet RF Devices
F2003

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices
Polyfet RF Devices
F2004

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices
Polyfet RF Devices


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