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F1006のメーカーはPolyfet RF Devicesです、この部品の機能は「PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR」です。 |
部品番号 | F1006 |
| |
部品説明 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | ||
メーカ | Polyfet RF Devices | ||
ロゴ | |||
このページの下部にプレビューとF1006ダウンロード(pdfファイル)リンクがあります。 Total 2 pages
polyfet rf devices
F1006
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
120 Watts Single Ended
Package Style AV
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
250 Watts
0.7 oC/W
200 oC
-65 oC to 150oC
12 A
70 V
70 V 30V
RF CHARACTERISTICS ( 120WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz
η Drain Efficiency
60 % Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.3 A, Vgs = 0V
Idss Zero Bias Drain Curren
6 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.6 A, Vgs = Vds
gM Forward Transconductanc
4.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.18
Ohm
Vgs = 20V, Ids = 24 A
Idsat
Saturation Curren
33
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
198 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
24
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
120 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ F1006 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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