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FDS6679のメーカーはFairchild Semiconductorです、この部品の機能は「30 Volt P-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS6679 |
| |
部品説明 | 30 Volt P-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS6679ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
March 2005
FDS6679
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
RDS(ON) = 13 mΩ @ VGS = – 4.5 V
• Extended VGSS range (±25V) for battery applications
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6679
FDS6679
13’’
54
63
72
81
Ratings
–30
±25
–13
–50
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6679 Rev C1 (W)
1 Page Typical Characteristics
50
VGS = -10V
-6.0V
40
-4.5V
30
-4.0V
-3.5V
20
-3.0V
10
0
0
-2.5V
0.5 1 1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
2
Figure 1. On-Region Characteristics.
1.6
ID = -13A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5.0V
40
30
20
10
0
1.5
TA = -125oC
25oC
-55oC
2 2.5 3
-VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics.
3
2.6 VGS = -3.0V
2.2
1.8 -3.5V
-4.0V
1.4
-4.5V
-5.0V
-6.0V
1 -10V
0.6
0
10 20 30 40
-ID, DIRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
0.03
0.02
0.01
TA = 25oC
TA = 125oC
ID = -7.0A
0
2 2.5 3 3.5 4 4.5 5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679 Rev C1 (W)
3Pages | |||
ページ | 合計 : 4 ページ | ||
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