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FDS6672AのメーカーはFairchild Semiconductorです、この部品の機能は「30V N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS6672A |
| |
部品説明 | 30V N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS6672Aダウンロード(pdfファイル)リンクがあります。 Total 8 pages
February 2000
PRELIMINARY
FDS6672A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V
RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (33 nC typical)
• High power and current handling capability
D
D
D
D
G
SS
SO-8 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6672A
FDS6672A
13’’
5
6
7
8
Ratings
30
±12
12.5
50
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS6672A Rev B(W)
1 Page Typical Characteristics
50
VGS = 4.5V
3.5V
40
30
20
3.0V
2.5V
2.0V
10
0
0 0.5 1
VDS, DRAIN-SOURCE VOLTAGE (V)
1.5
Figure 1. On-Region Characteristics.
1.8
ID = 15A
1.6 VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
60
VDS = 5V
45
30
15
0
0.5
TA = 125oC
25oC
-55oC
1 1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3
Figure 5. Transfer Characteristics.
1.5
VGS = 2.5V
1.3
1.1
0.9
0
3.0V
3.5V
4.0V
4.5V
10 20 30 40 50 60
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
0.02
ID = 6 A
0.015
0.01
0.005
TA = 125oC
TA = 25oC
0
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
TA = 125oC
1
0.1
25oC
-55oC
0.01
0.001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6672A Rev B(W)
3Pages SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
K0
Wc
B0
Tc
A0 P1 D1
User Direction of Feed
E1
F
E2
W
Dimensions are in millimeter
Pkg type
A0
SOIC(8lds) 6.50
(12mm)
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0 D1 E1 E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
F P1
5.50
+/-0.05
8.0
+/-0.1
P0
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
Typical
component
A0 center line
Sketch B (Top View)
Component Rotation
K0
2.1
+/-0.10
T
0.450
+/-
0.150
Wc
9.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
12mm
7" Dia
12mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
7.00
178
Dim W1
0.488 +0.078/-0.000
12.4 +2/0
0.488 +0.078/-0.000
12.4 +2/0
DETAIL AA
Dim W2
0.724
18.4
0.724
18.4
Dim W3 (LSL-USL)
0.469 – 0.606
11.9 – 15.4
0.469 – 0.606
11.9 – 15.4
© 1998 Fairchild Semiconductor Corporation
July 1999, Rev. B
6 Page | |||
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部品番号 | 部品説明 | メーカ |
FDS6672 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6672A | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |