DataSheet.jp

FDS6575 の電気的特性と機能

FDS6575のメーカーはFairchild Semiconductorです、この部品の機能は「Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS6575
部品説明 Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとFDS6575ダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

FDS6575 Datasheet, FDS6575 PDF,ピン配置, 機能
November 1998
FDS6575
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate charge
for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-10 A, -20 V. RDS(ON) = 0.013 @ VGS = -4.5 V,
RDS(ON) = 0.017 @ VGS = -2.5 V.
Low gate charge (50nC typical).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D
D
D
D
FD65S75
SO-8
pin 1
S
G
S
S
SO-8
5
6
7
8
SOT-223
SOIC-16
4
3
2
1
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS6575
-20
±8
-10
-50
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
FDS6575 Rev.C1

1 Page





FDS6575 pdf, ピン配列
Typical Electrical Characteristics
50
V = -4.5V
GS -3.0V
40 -2.5V
-2.0V
30
20
10 -1.5V
0
0 0.6 1.2 1.8 2.4
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3
1.6
I D= -10A
1.4 VGS = -4.5V
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (° C)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = -5.0V
40
30
TJ = -55° C
25° C
125° C
20
10
0
0.5 1 1.5 2 2.5
- VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
2
V GS = -2.0V
1.5
1
-2.5 V
-3.0 V
-3.5 V
-4.5V
0.5
0
10 20 30 40
- I D , DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
0.05
0.04
0.03
0.02
0.01
0
1
ID = -5.0A
TJ= 125° C
25° C
234
- VGS , GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
VGS = 0V
10
TJ= 125° C
1
25° C
0.1 -55° C
0.01
0.001
0
0.3 0.6 0.9
- VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6575 Rev.C1


3Pages


FDS6575 電子部品, 半導体
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
K0
Wc
B0
Tc
A0 P1 D1
User Direction of Feed
E1
F
E2
W
Dimensions are in millimeter
Pkg type
A0
SOIC(8lds) 6.50
(12mm)
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0 D1 E1 E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
F P1
5.50
+/-0.05
8.0
+/-0.1
P0
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
Typical
component
A0 center line
Sketch B (Top View)
Component Rotation
K0
2.1
+/-0.10
T
0.450
+/-
0.150
Wc
9.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
12mm
7" Dia
12mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
7.00
178
Dim W1
0.488 +0.078/-0.000
12.4 +2/0
0.488 +0.078/-0.000
12.4 +2/0
DETAIL AA
Dim W2
0.724
18.4
0.724
18.4
Dim W3 (LSL-USL)
0.469 – 0.606
11.9 – 15.4
0.469 – 0.606
11.9 – 15.4
© 1998 Fairchild Semiconductor Corporation
July 1999, Rev. B

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ FDS6575 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FDS6570A

Single N-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS6572A

20V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS6574A

20V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS6575

Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap