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FDS5670のメーカーはFairchild Semiconductorです、この部品の機能は「60V N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS5670 |
| |
部品説明 | 60V N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS5670ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
August 1999
FDS5670
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V
RDS(ON) = 0.017 Ω @ VGS = 6 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
5
6
7
8
Ratings
60
±20
10
50
2.5
1.2
1
-55 to +150
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS5670
FDS5670
13’’
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS5670 Rev. B
1 Page Typical Characteristics
60
VGS = 10V 6V
50 5V
4.5V
40
4V
30
20
10
0
0
3.5V
123
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
4
2
1.8
ID = 10A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
60
VDS =5V
50
40
TA = -55oC
25oC
125oC
30
20
10
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
2
1.8
1.6 VGS = 4.0V
1.4 4.5V
5.0V
1.2 6.0V
7.0V
10V
1
0.8
0
10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
60
0.05
0.04
ID = 10A
0.03
0.02
0.01
TA = 125oC
TA = 25oC
0
3456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
100
VGS=0
10
1
0.1
0.01
TJ=125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
VSD, BODY DIODE VOLTAGE (V)
1
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS5670 Rev. B
3Pages SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
K0
Wc
B0
Tc
A0 P1 D1
User Direction of Feed
E1
F
E2
W
Dimensions are in millimeter
Pkg type
A0
SOIC(8lds) 6.50
(12mm)
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0 D1 E1 E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
F P1
5.50
+/-0.05
8.0
+/-0.1
P0
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
Typical
component
A0 center line
Sketch B (Top View)
Component Rotation
K0
2.1
+/-0.10
T
0.450
+/-
0.150
Wc
9.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
12mm
7" Dia
12mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
7.00
178
Dim W1
0.488 +0.078/-0.000
12.4 +2/0
0.488 +0.078/-0.000
12.4 +2/0
DETAIL AA
Dim W2
0.724
18.4
0.724
18.4
Dim W3 (LSL-USL)
0.469 – 0.606
11.9 – 15.4
0.469 – 0.606
11.9 – 15.4
© 1998 Fairchild Semiconductor Corporation
July 1999, Rev. B
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDS5670 | 60V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS5672 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |