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FDS4435A の電気的特性と機能

FDS4435AのメーカーはFairchild Semiconductorです、この部品の機能は「P-Channel Logic Level PowerTrenchMOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS4435A
部品説明 P-Channel Logic Level PowerTrenchMOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDS4435A Datasheet, FDS4435A PDF,ピン配置, 機能
October 2001
FDS4435A
P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer appli-
cations: load switching and power management, battery
charging circuits, and DC/DC conversion.
Features
• -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V
RDS(ON) = 0.025 W @ VGS = -4.5 V
• Low gate charge (21nC typical).
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
D
D
D
D
5
6
SO-8
G
SS
S
7
8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
4
3
2
1
Ratings
-30
± 20
-9
-50
2.5
1.2
1
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4435A
FDS4435A
13’’
Tape Width
12mm
Quantity
2500 units
ã2001 Fairchild Semiconductor Corporation
FDS4435A Rev. D

1 Page





FDS4435A pdf, ピン配列
Typical Characteristics

VGS= -10V
-6.0V

-4.5V
-4.0V
 -3.5V




-3.0V
-2.5V
      
-V DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics
1.6
VGS = -10V
ID = -9A
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (OC)
Figure 3. On-Resistance Variation
with Temperature
40
VDS = -5V
30
20
TJ = -55OC
25OC
125OC
10
0
01234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
2.4
2.2
2 VGS = -3.5V
1.8 -4.0V
1.6 -4.5V
-5.0V
1.4
-6.0V
1.2 -7.0V
-8.0V
1 -10V
0.8
0
10 20 30 40
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
50
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
ID = -4.5A
TJ = 125OC
TJ = 25OC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
FDS4435A Rev. D


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共有リンク

Link :


部品番号部品説明メーカ
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P-Channel PowerTrench MOSFET

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FDS4435BZ

P-Channel PowerTrench MOSFET

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