|
|
FDS3612のメーカーはFairchild Semiconductorです、この部品の機能は「100V N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS3612 |
| |
部品説明 | 100V N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS3612ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
March 2001
FDS3612
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
• DC/DC converter
• Motor Driver
Features
• 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V
RDS(ON) = 130 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (14 nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3612
FDS3612
13’’
Ratings
100
± 20
3.4
20
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS3612 Rev B1(W)
1 Page Typical Characteristics
20
VGS = 10V
5.0V
4.5V
16
12
4.0V
8
4
3.5V
0
0246
VDS, DRAIN-SOURCE VOLTAGE (V)
8
Figure 1. On-Region Characteristics.
2.2
2 ID = 3.4A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 10V
16
12
8
TA = 125oC
25oC
4
-55oC
0
2 2.5 3 3.5 4 4.5 5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6
1.4 VGS = 4.0V
4.5V
1.2 5.0V
6.0V
10V
1
0.8
0
4 8 12 16
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
ID = 1.7 A
0.3
0.2 TA = 125oC
TA = 25oC
0.1
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3612 Rev B1(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ FDS3612 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FDS3612 | 100V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |