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FDS3612 の電気的特性と機能

FDS3612のメーカーはFairchild Semiconductorです、この部品の機能は「100V N-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS3612
部品説明 100V N-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDS3612 Datasheet, FDS3612 PDF,ピン配置, 機能
March 2001
FDS3612
100V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
DC/DC converter
Motor Driver
Features
3.4 A, 100 V. RDS(ON) = 120 m@ VGS = 10 V
RDS(ON) = 130 m@ VGS = 6 V
Fast switching speed
Low gate charge (14 nC typ)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3612
FDS3612
13’’
Ratings
100
± 20
3.4
20
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS3612 Rev B1(W)

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FDS3612 pdf, ピン配列
Typical Characteristics
20
VGS = 10V
5.0V
4.5V
16
12
4.0V
8
4
3.5V
0
0246
VDS, DRAIN-SOURCE VOLTAGE (V)
8
Figure 1. On-Region Characteristics.
2.2
2 ID = 3.4A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 10V
16
12
8
TA = 125oC
25oC
4
-55oC
0
2 2.5 3 3.5 4 4.5 5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.8
1.6
1.4 VGS = 4.0V
4.5V
1.2 5.0V
6.0V
10V
1
0.8
0
4 8 12 16
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
ID = 1.7 A
0.3
0.2 TA = 125oC
TA = 25oC
0.1
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3612 Rev B1(W)


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共有リンク

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部品番号部品説明メーカ
FDS3612

100V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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