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FDS2582 の電気的特性と機能

FDS2582のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS2582
部品説明 N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDS2582 Datasheet, FDS2582 PDF,ピン配置, 機能
September 2002
FDS2582
N-Channel PowerTrench® MOSFET
150V, 4.1A, 66m
Features
• rDS(ON) = 57m(Typ.), VGS = 10V, ID = 4.1A
• Qg(tot) = 19nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82855
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
Package Marking and Ordering Information
Device Marking
FDS2582
Device
FDS2582
Package
SO-8
Reel Size
330mm
54
63
72
81
Ratings
150
±20
4.1
2.6
Figure 4
252
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/oC
oC
50 oC/W
80 oC/W
25 oC/W
Tape Width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B

1 Page





FDS2582 pdf, ピン配列
Typical Characteristics TA = 25°C unless otherwise noted
1.2 5
VGS = 10V
1.0 4
0.8
3
0.6
2
0.4
1
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
RθJA=50oC/W
PDM
0.01
0.001
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
102
103
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
400
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TC
125
VGS = 10V
1
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B


3Pages


FDS2582 電子部品, 半導体
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VGS
Ig(REF)
VDS
L
DUT
+
VDD
-
Figure 17. Gate Charge Test Circuit
VDD
Qg(TOT)
VDS
VGS
VGS = 2V
0
Qg(TH)
Qgs2
Qgs
Ig(REF)
0
Qgd
VGS = 10V
Figure 18. Gate Charge Waveforms
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
Figure 19. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
Figure 20. Switching Time Waveforms
©2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B

6 Page



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部品番号部品説明メーカ
FDS2582

N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m

Fairchild Semiconductor
Fairchild Semiconductor


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