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FDP13AN06A の電気的特性と機能

FDP13AN06AのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDP13AN06A
部品説明 N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDP13AN06A Datasheet, FDP13AN06A PDF,ピン配置, 機能
July 2003
FDB13AN06A0 / FDP13AN06A0
N-Channel PowerTrench® MOSFET
60V, 62A, 13.5m
Features
• rDS(ON) = 11.5m(Typ.), VGS = 10V, ID = 62A
• Qg(tot) = 22nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82555
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
D
G
S
Ratings
60
±20
62
44
10.9
Figure 4
56
115
0.77
-55 to 175
1.3
62
43
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1

1 Page





FDP13AN06A pdf, ピン配列
Typical Characteristics TC = 25°C unless otherwise noted
1.2 80
1.0
60
0.8
0.6 40
0.4
20
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
Figure 3. Normalized Maximum Transient Thermal Impedance
101
800
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
175 - TC
150
100
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1


3Pages


FDP13AN06A 電子部品, 半導体
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
Figure 15. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
VGS
Ig(REF)
VDS
L
DUT
+
VDD
-
Figure 17. Gate Charge Test Circuit
VDD
Qgs2
VDS
Qg(TOT)
VGS
VGS = 10V
VGS = 2V
0
Qg(TH)
Qgs
Ig(REF)
0
Qgd
Figure 18. Gate Charge Waveforms
VDS
RL
VGS
RGS
DUT
+
VDD
-
VGS
Figure 19. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
10%
VGS
10%
0
50%
PULSE WIDTH
90%
50%
Figure 20. Switching Time Waveforms
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1

6 Page



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部品番号部品説明メーカ
FDP13AN06A

N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m

Fairchild Semiconductor
Fairchild Semiconductor
FDP13AN06A0

N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m

Fairchild Semiconductor
Fairchild Semiconductor


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