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FDC645N PDF Data sheet ( 特性 )

部品番号 FDC645N
部品説明 N-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 


Total 8 pages
		

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FDC645N Datasheet, FDC645N PDF,ピン配置, 機能
July 2000
PRELIMINARY
FDC645N
N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Features
5.5 A, 30 V.
RDS(ON) = 30 m@ VGS = 4.5 V
RDS(ON) = 26 m@ VGS = 10 V
High performance trench technology for extremely
low RDS(ON)
Low gate charge (13 nC typical)
High power and current handling capability
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.645
FDC645N
7’’
Ratings
30
±12
5.5
20
1.6
0.8
-55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDC645N Rev B(W)

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