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FDC645のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDC645 |
| |
部品説明 | N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC645ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
July 2000
PRELIMINARY
FDC645N
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 5.5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 26 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (13 nC typical)
• High power and current handling capability
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.645
FDC645N
7’’
Ratings
30
±12
5.5
20
1.6
0.8
-55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDC645N Rev B(W)
1 Page Typical Characteristics
20
VGS = 10V
4.5V
3.5V
15 3.0V
2.5V
10
5
2.0V
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 5.5A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
30
VDS = 5V
25
20
TA = -55oC
25oC
125oC
15
10
5
0
1 1.5 2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics.
1.4
VGS = 3.0V
1.2
3.5V
4.0V
1
4.5V
5.0V 6.0V
10V
0.8
0
5 10 15 20
ID, DRAIN CURRENT (A)
25
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.07
ID = 3.75 A
0.06
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
2
2.5 3 3.5 4 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
TA = 125oC
25oC
0.1 -55oC
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC645N Rev B(W)
3Pages SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
E1
K0
Wc
B0
F
E2
W
Tc
A0 P1 D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
W D0 D1 E1 E2
F
P1 P0
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.125 +/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
Typical
component
A0 center line
SSOT-6 Reel Configuration: Figure 4.0
Sketch B (Top View)
Component Rotation
K0 T
Wc
1.37
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
8mm
7" Dia
8mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
4.00
100
Dim W1
0.331 +0.059/-0.000
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
DETAIL AA
Dim W2
0.567
14.4
0.567
14.4
Dim W3 (LSL-USL)
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
July 1999, Rev. C
6 Page | |||
ページ | 合計 : 8 ページ | ||
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