DataSheet.jp

FDC6327 の電気的特性と機能

FDC6327のメーカーはFairchild Semiconductorです、この部品の機能は「Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDC6327
部品説明 Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとFDC6327ダウンロード(pdfファイル)リンクがあります。

Total 12 pages

No Preview Available !

FDC6327 Datasheet, FDC6327 PDF,ピン配置, 機能
July 2000
FDC6327C
Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N & P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where
the bigger more expensive SO-8 and TSSOP-8 packages
are impractical.
Applications
DC/DC converter
Load switch
Motor driving
Features
N-Channel 2.7A, 20V. RDS(on) = 0.08@ VGS = 4.5V
RDS(on) = 0.12@ VGS = 2.5V
P-Channel -1.6A, -20V.RDS(on) = 0.17@ VGS = -4.5V
RDS(on)= 0.25@ VGS = -2.5V
Fast switching speed.
Low gate charge.
High performance trench technology for extremely
low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller
than SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT TM -6
G2
S2
G1
43
52
61
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
N-Channel P-Channel
20 -20
±8 ±8
2.7 -1.9
8 -8
0.96
0.9
0.7
-55 to +150
130
60
Units
V
V
A
W
°C
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.327
FDC6327C
7”
Tape Width
8mm
Quantity
3000
1999 Fairchild Semiconductor Corporation
FDC6327C, Rev. E

1 Page





FDC6327 pdf, ピン配列
Electrical Characteristics (continued) TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
N-Channel
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6
P-Channel
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6
N-Channel
VDS = 10 V, ID = 2.7 A, VGS = 4.5V
P-Channel
VDS = -10 V, ID = -1.9 A,VGS = -4.5V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
7
9
14
12
14
3
3
3.25
2.85
0.65
0.68
0.90
0.65
15
14
18
25
22
25
9
9
4.5
4.0
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
0.8 A
-0.8
VSD Drain-Source Diode Forward VGS = 0 V, IS = 0.8 A (Note 2)
N-Ch
Voltage
VGS = 0 V, IS = - 0.8 A (Note 2)
P-Ch
0.76 1.2
-0.79 -1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy
equally.
a) 130 °C/W when
mounted on a 0.125 in2
pad of 2 oz. copper.
b) 140 °C/W when
mounted on a 0.005 in2
pad of 2 oz. copper.
c) 180 °C/W when
mounted on a 0.0015 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDC6327C, Rev. E


3Pages


FDC6327 電子部品, 半導体
Typical Characteristics: P-Channel
10
8
6
4
2
0
0
VGS = -4.5V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
1234
-VDS, DRAIN-SOURCE VOLTAGE (V)
5
Figure 11. On-Region Characteristics.
1.5
ID = -1.9A
1.4 VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation
with Temperature.
10
VDS = -5V
8
6
TA = -55oC
25oC
125oC
4
2
0
0123
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
4
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS = -2.0V
-2.5V
-3.0V
-3.5V
-4.0V -4.5V
2468
-ID, DIRAIN CURRENT (A)
10
Figure 12. On-Resistance Variation
with Drain Current and Gate Voltage.
0.5
0.4
0.3
0.2
0.1
0
1
ID = -1A
TA = 125oC
TA = 25oC
234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 14. On-Resistance Variation
with Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.4 0.8 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
1.6
FDC6327C, Rev. E

6 Page



ページ 合計 : 12 ページ
 
PDF
ダウンロード
[ FDC6327 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FDC6320

Dual N & P Channel / Digital FET

Fairchild Semiconductor
Fairchild Semiconductor
FDC6320C

Dual N & P Channel / Digital FET

Fairchild Semiconductor
Fairchild Semiconductor
FDC6321C

Dual N & P Channel / Digital FET

Fairchild Semiconductor
Fairchild Semiconductor
FDC6322

Dual N & P Channel / Digital FET

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap