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FDC6312PのメーカーはFairchild Semiconductorです、この部品の機能は「Dual P-Channel 1.8V PowerTrench Specified MOSFET」です。 |
部品番号 | FDC6312P |
| |
部品説明 | Dual P-Channel 1.8V PowerTrench Specified MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC6312Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
January 2001
FDC6312P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
• Power management
• Load switch
Features
• –2.3 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V
RDS(ON) = 155 mΩ @ VGS = –2.5 V
RDS(ON) = 225 mΩ @ VGS = –1.8 V
• High performance trench technology for extremely
low RDS(ON)
• SuperSOTTM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.312
FDC6312P
13’’
4
5
6
Ratings
–20
±8
–2.3
–7
0.96
0.9
0.7
-55 to +150
130
60
Tape width
12mm
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDC6312P Rev C (W)
1 Page Typical Characteristics
6
VGS = -4.5V
5 -3.5V
-3.0V
-2.5V
4
-2.0V
3
-1.8V
2
1 -1.5V
0
0 0.5 1 1.5 2
-VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
2.5
2.25
2
VGS = -1.8V
1.75
-2.0V
1.5
-2.5V
1.25 -3.0V
-3.5V
1 -4.5V
0.75
0
12345
-ID, DRAIN CURRENT (A)
6
Figure 1. On-Region Characteristics.
1.6
ID = -2.3A
VGS =-4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
6
VDS = 5V
5
4
TA = -55oC 25oC
125oC
3
2
1
0
0.5
1 1.5 2 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
3
Figure 5. Transfer Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.35
0.3
0.25
0.2
0.15
0.1
0.05
1
ID = -0.8 A
TA = 125oC
TA = 25oC
234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1 TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6312P Rev C (W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ FDC6312P データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FDC6312P | Dual P-Channel 1.8V PowerTrench Specified MOSFET | Fairchild Semiconductor |