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FDC604PのメーカーはFairchild Semiconductorです、この部品の機能は「P-Channel 1.8V Specified PowerTrench MOSFET」です。 |
部品番号 | FDC604P |
| |
部品説明 | P-Channel 1.8V Specified PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC604Pダウンロード(pdfファイル)リンクがあります。 Total 8 pages
June 2000
PRELIMINARY
FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –5.5 A, –20 V.
RDS(ON) = 0.033 Ω @ VGS = –4.5 V
RDS(ON) = 0.043 Ω @ VGS = –2.5 V
RDS(ON) = 0.060 Ω @ VGS = –1.8 V
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.604
FDC604P
7’’
Ratings
–20
±8
-5.5
-20
1.6
0.8
-55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDC604P Rev B (W)
1 Page Typical Characteristics
20
VGS = -4.5V
-2.5V
15
10
-2.0V
-1.8V
5
-1.5V
0
0123
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
1.4
ID = -5.5A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
20
VDS = -5V
15
10
TA = -55oC
25oC
125oC
5
0
0 0.5 1 1.5 2 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
VGS = -1.5V
2.5
2
-1.8V
-2.0V
1.5
-2.5V
1 -4.5V
0.5
0
5 10 15
-ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
0.09
ID = -2.8 A
0.06
0.03
TA = 125oC
TA = 25oC
0
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
TA = 125oC
25oC
0.01
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC604P Rev B(W)
3Pages SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
E1
K0
Wc
B0
F
E2
W
Tc
A0 P1 D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
W D0 D1 E1 E2
F
P1 P0
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.125 +/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
Typical
component
A0 center line
SSOT-6 Reel Configuration: Figure 4.0
Sketch B (Top View)
Component Rotation
K0 T
Wc
1.37
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
8mm
7" Dia
8mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
4.00
100
Dim W1
0.331 +0.059/-0.000
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
DETAIL AA
Dim W2
0.567
14.4
0.567
14.4
Dim W3 (LSL-USL)
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
July 1999, Rev. C
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDC604 | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
FDC604P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |