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FDC6020CのメーカーはFairchild Semiconductorです、この部品の機能は「Complementary PowerTrench MOSFET」です。 |
部品番号 | FDC6020C |
| |
部品説明 | Complementary PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC6020Cダウンロード(pdfファイル)リンクがあります。 Total 9 pages
November 2003
FDC6020C
Complementary PowerTrench MOSFET
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor Driving
Features
• Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V
RDS(ON) = 82 mΩ @ VGS = – 2.5 V
• Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V
RDS(ON) = 39 mΩ @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for single Operation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.020 FDC6020C
7’’
2003 Fairchild Semiconductor Corporation
Bottom Drain Contact
Q2 (N)
4
3
52
61
Q1 (P)
Bottom Drain Contact
Q1 Q2
–20 20
±12 ±12
–4.2 5.9
–20
1.6
20
1.8
1.2
–55 to +150
Units
V
V
A
W
°C
68 °C/W
1
Tape width
8mm
Quantity
3000 units
FDC6020C Rev B(W)
1 Page Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward VGS = 0 V,
IS = –1.3 A (Note 2)
Voltage
VGS = 0 V,
IS = 1.3 A (Note 2)
trr
Diode Reverse Recovery
IF = – 4.2A,dIF/dt = 100 A/µs
Time
IF = 5.9A, dIF/dt = 100 A/µs
Qrr
Diode Reverse Recovery
IF = – 4.2A,dIF/dt = 100 A/µs
Charge
IF = 5.9A, dIF/dt = 100 A/µs
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–0.8
0.7
17
15
6
4
–1.3
1.3
–1.2
1.2
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 68°C/W when
mounted on a 1in2 pad
of 2 oz copper (Single
Operation).
b) 102°C/W when mounted
on a minimum pad of 2 oz
copper (Single Operation).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC6020C RevB (W)
3Pages Typical Characteristics : Q2
20
VGS = 4.5V
3.5V
16
3.0V 2.5V
12
2.0V
8
4
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
1.6
ID = 5.9A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation with
Temperature.
20
VDS = 5V
16
12
TA =-55oC
25oC
125oC
8
4
0
1 1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
2.8
2.6
2.4
2.2 VGS = 2.0V
2
1.8
1.6
1.4
1.2
1
0.8
0
4
2.5V
3.0V
3.5V
8 12
ID, DRAIN CURRENT (A)
4.5V
16
20
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1.5
ID = 2.9A
TA = 125oC
TA = 25oC
2 2.5 3 3.5 4 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
TA = 125oC
25oC
0.01
0.001
-55oC
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6020C RevB (W)
6 Page | |||
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部品番号 | 部品説明 | メーカ |
FDC6020C | Complementary PowerTrench MOSFET | Fairchild Semiconductor |