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FDC2512のメーカーはFairchild Semiconductorです、この部品の機能は「150V N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDC2512 |
| |
部品説明 | 150V N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC2512ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
February 2002
FDC2512
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 1.4 A, 150 V.
RDS(ON) = 425 mΩ @ VGS = 10 V
RDS(ON) = 475 mΩ @ VGS = 6 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.252
FDC2512
7’’
Ratings
150
± 20
1.4
8
1.6
0.8
−55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC2512 Rev B3 (W)
1 Page Typical Characteristics
6
VGS = 10V
4.5V
6.0V
4
4.0V
2
0
02468
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.2
ID = 1.4A
VGS =10V
1.8
1.4
1
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
8
VDS = 25V
6
TA = -55oC
25oC
125oC
4
2
0
2345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
1.4
1.3
VGS = 4.0V
1.2
1.1
1
4.5V
5.0V
6.0V
10V
0.9
0
123
ID, DRAIN CURRENT (A)
4
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
ID = 0.7A
0.7
0.6
TA = 125oC
0.5
0.4
0.3
0.2
3
TA = 25oC
45678
VGS, GATE TO SOURCE VOLTAGE (V)
9
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC2512 Rev B3(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDC2512 | 150V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |