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FDC2512 の電気的特性と機能

FDC2512のメーカーはFairchild Semiconductorです、この部品の機能は「150V N-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDC2512
部品説明 150V N-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDC2512 Datasheet, FDC2512 PDF,ピン配置, 機能
February 2002
FDC2512
150V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Features
1.4 A, 150 V.
RDS(ON) = 425 m@ VGS = 10 V
RDS(ON) = 475 m@ VGS = 6 V
High performance trench technology for extremely
low RDS(ON)
Low gate charge (8nC typ)
High power and current handling capability
Fast switching speed
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.252
FDC2512
7’’
Ratings
150
± 20
1.4
8
1.6
0.8
55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC2512 Rev B3 (W)

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FDC2512 pdf, ピン配列
Typical Characteristics
6
VGS = 10V
4.5V
6.0V
4
4.0V
2
0
02468
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.2
ID = 1.4A
VGS =10V
1.8
1.4
1
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
8
VDS = 25V
6
TA = -55oC
25oC
125oC
4
2
0
2345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
1.4
1.3
VGS = 4.0V
1.2
1.1
1
4.5V
5.0V
6.0V
10V
0.9
0
123
ID, DRAIN CURRENT (A)
4
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
ID = 0.7A
0.7
0.6
TA = 125oC
0.5
0.4
0.3
0.2
3
TA = 25oC
45678
VGS, GATE TO SOURCE VOLTAGE (V)
9
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC2512 Rev B3(W)


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部品番号部品説明メーカ
FDC2512

150V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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