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PDF FD1000FX-90 Data sheet ( Hoja de datos )

Número de pieza FD1000FX-90
Descripción HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



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No Preview Available ! FD1000FX-90 Hoja de datos, Descripción, Manual

FD1000FX-90
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FX-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
R4
9
`'39
CATHODE
φ 60
q IF(AV) Average forward current ........................800A
q VRRM Repetitive peak reverse voltage ....................4500V
q QRR Reverse recovery charge ................. 2000µC
q Press pack type
TYPE
NAME
ANODE
φ 60
φ 102 MAX
M5 ! 0.8
DEPTH 2.5
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
VLTDS
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Long term DC stability
Voltage class
90
4500
4500
3600
3000
Symbol
IF(RMS)
IF(AV)
IFSM
I2t
Tj
Tstg
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 77°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 39
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 2500A, Instantaneous measurement
IFM = 800A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
Ratings
1250
800
20
1.7 ! 106
–40 ~ +125
–40 ~ +150
26.5 ~ 43.0
700
Unit
V
V
V
V
Unit
A
A
kA
A2s
°C
°C
kN
g
Limits
Unit
Min Typ Max
— — 150 mA
——
3.5 V
— — 2000 µC
— — 0.017 °C/W
Aug.1998

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