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FC117 の電気的特性と機能

FC117のメーカーはSanyo Semicon Deviceです、この部品の機能は「Low-Frequency General-Purpose Amp Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 FC117
部品説明 Low-Frequency General-Purpose Amp Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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FC117 Datasheet, FC117 PDF,ピン配置, 機能
Ordering number:EN3115
FC117
PNP Epitaxial Planar Silicon Composite Transistor
Low-Frequency
General-Purpose Amp Applications
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC117 is formed with two chips, being equiva-
lent to the 2SA1753, placed in one package.
· Low collector to emitter saturation voltage.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2067
[FC117]
Electrical Connection
E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collector1
Specifications
SANYO:CP6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1 unit
Conditions
Ratings
–20
–15
–5
–500
–1
–100
200
300
150
–55 to+150
Unit
V
V
V
mA
A
mA
mW
mW
˚C
˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain Ratio
ICBO
IEBO
hFE(1)
hFE(2)
hFE(small/
large)
VCB=–15V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–10mA
VCE=–2V, IC=–400mA
VCE=–2V, IC=–10mA
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=–2V, IC=–50mA
VCE=–10V, f=1MHz
IC=–5mA. IB=–0.5mA
IC=–200mA. IB=–10mA
IC=–200mA. IB=–10mA
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
Note: The specifications shown above are for each individual transistor.
Ratings
min typ
160
70
0.8 0.98
max
–0.1
–0.1
560
Unit
µA
µA
400
6.5
–15
–200
–0.95
–20
–15
–5
–35
–360
–1.2
MHz
pF
mV
mV
V
V
V
V
Marking:117
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/5129MO, TS No.3115-1/3

1 Page





FC117 pdf, ピン配列
FC117
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3115-3/3


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共有リンク

Link :


部品番号部品説明メーカ
FC11

Low-Frequency General-Purpose Amp/ Differential Amp Applications

Sanyo Semicon Device
Sanyo Semicon Device
FC110

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device
FC111

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device
FC112

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device


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