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FC112 の電気的特性と機能

FC112のメーカーはSanyo Semicon Deviceです、この部品の機能は「NPN Epitaxial Planar Silicon Composite Transistor Switching Applications」です。


製品の詳細 ( Datasheet PDF )

部品番号 FC112
部品説明 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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FC112 Datasheet, FC112 PDF,ピン配置, 機能
Ordering number:EN3080
FC112
NPN Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
· On-chip bias resistors (R1=22k, R2=22k)
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC112 is formed with two chips, being equiva-
lent to the 2SC3396, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm
2066
[FC112]
Electrical Connection
C1:Collerctor1
C2:Collerctor2
B2:Base2
EC:Emitter Common
B1:Base1
SANYO:CP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PT
Tj
Tstg
1 unit
Conditions
Ratings
50
50
10
100
200
200
300
150
–55 to+150
Unit
V
V
V
mA
mA
mW
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
ICBO
ICEO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
R1/R2
VCB=40V, IE=0
VCE=40V, IB=0
VEB=5V, IC=0
VCE=5V, IC=5mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
IC=10mA. IB=0.5mA
IC=10µA, IE=0
IC=100µA, RBE=
VCE=5V, IC=100µA
VCE=0.2V, IC=5mA
Note: The specifications shown above are for each individual transistor.
Marking:112
Ratings
min typ
70 113
50
250
3.3
0.1
50
50
0.8 1.1
1.0 1.9
15 22
0.9 1.0
max
0.1
0.5
160
0.3
1.5
3.0
29
1.1
Unit
µA
µA
µA
MHz
pF
V
V
V
V
V
k
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4139MO, TS No.3080-1/2

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共有リンク

Link :


部品番号部品説明メーカ
FC11

Low-Frequency General-Purpose Amp/ Differential Amp Applications

Sanyo Semicon Device
Sanyo Semicon Device
FC110

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device
FC111

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device
FC112

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications

Sanyo Semicon Device
Sanyo Semicon Device


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