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FK30SM-6のメーカーはMitsubishi Electric Semiconductorです、この部品の機能は「HIGH-SPEED SWITCHING USE」です。 |
部品番号 | FK30SM-6 |
| |
部品説明 | HIGH-SPEED SWITCHING USE | ||
メーカ | Mitsubishi Electric Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFK30SM-6ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
FK30SM-6
MITSUBISHI Nch POWER MOSFET
FK30SM-6
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
r
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
q we
5.45
5.45
4.4
0.6 2.8
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) ........................................................... 0.143Ω
¡ID ......................................................................................... 30A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
4
wr
q GATE
q
w DRAIN
e SOURCE
r DRAIN
e
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
Conditions
Ratings
300
±30
30
90
30
90
275
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
1 Page OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
50 10V
TC = 25°C
Pulse Test
40 6V
30
20 5V
10
PD =
275W
4V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
10
8 ID = 50A
6
30A
4
2
TC = 25°C
Pulse Test
0
04
8
15A
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
TC = 25°C
VDS = 50V
32 Pulse Test
24
16
8
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
MITSUBISHI Nch POWER MOSFET
FK30SM-6
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V
20 10V
16
TC = 25°C
Pulse Test
5V
PD =
12 275W
8
4.5V
4
4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.20
TC = 25°C
Pulse Test
0.16
VGS = 10V
0.12
20V
0.08
0.04
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7 VDS = 10V
5 Pulse Test
3
2 TC = 25°C
75°C
101 125°C
7
5
3
2
100
100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ FK30SM-6 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FK30SM-5 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
FK30SM-6 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
FK30SM-6 | Nch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |