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FK10KM-9のメーカーはMitsubishi Electric Semiconductorです、この部品の機能は「HIGH-SPEED SWITCHING USE」です。 |
部品番号 | FK10KM-9 |
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部品説明 | HIGH-SPEED SWITCHING USE | ||
メーカ | Mitsubishi Electric Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFK10KM-9ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
FK10KM-9
MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
¡VDSS ................................................................................ 450V
¡rDS (ON) (MAX) .............................................................. 0.92Ω
¡ID ......................................................................................... 10A
¡Viso ................................................................................ 2000V
¡Integrated Fast Recovery Diode (MAX.) ........150ns
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
w
q GATE
q w DRAIN
e SOURCE
e
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Viso
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
450
±30
10
30
10
30
35
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
g
Feb.1999
1 Page OUTPUT CHARACTERISTICS
(TYPICAL)
20
PD = 35W
VGS = 20V
10V
7V
6V
16
12
TC = 25°C
Pulse Test
8 5V
4
4V
0
0 10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
ID = 15A
16
10A
8
5A
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 50V
16 Pulse Test
12
8
4
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V)
MITSUBISHI Nch POWER MOSFET
FK10KM-9
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
10
PD=
35W
VGS=20V 10V 6V
8
5V
6
4
TC = 25°C
Pulse Test
2
4V
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
VGS = 10V
1.2 20V
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
VDS = 10V
Pulse Test
5
TC=25°C
3 75°C
2 125°C
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ FK10KM-9 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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FK10KM-9 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |