FJNS4214R Datasheet PDF - Fairchild Semiconductor
| Part Number | FJNS4214R | |
| Description | PNP Epitaxial Silicon Transistor | |
| Manufacturers | Fairchild Semiconductor | |
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FJNS4214R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1 =4.7KΩ, R2=47KΩ)
• Complement to FJNS3214R
1 TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
-50
-50
-10
-100
300
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -10µA, IE=0
IC= -100µA, IB=0
VCB= -40V, IE=0
VCE= -5V, IC= -5mA
IC= -10mA, IB= -0.5mA
VCE= -10V, IC=-5mA
VCB= -10V, IE=0
f=1.0MHz
VI(off)
VI(on)
R1
R1/R2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
VCE= -5V, IC= -100µA
VCE= -0.2V, IC= -5mA
Equivalent Circuit
R1
B
R2
Min.
-50
-50
68
-0.5
3.2
0.09
Typ.
200
5.5
4.7
0.1
Max.
-0.1
-0.3
-1.3
6.2
0.11
C
E
Units
V
V
µA
V
MHz
pF
V
V
KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FJNS4214R electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FJNS4214R.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| FJNS4214R | The function is PNP Epitaxial Silicon Transistor. Fairchild Semiconductor | |
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