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FJAF6808D の電気的特性と機能

FJAF6808DのメーカーはFairchild Semiconductorです、この部品の機能は「NPN Triple Diffused Planar Silicon Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 FJAF6808D
部品説明 NPN Triple Diffused Planar Silicon Transistor
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FJAF6808D Datasheet, FJAF6808D PDF,ピン配置, 機能
FJAF6808D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
B
45typ.
E
Rating
1500
750
6
8
16
50
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Base-Emitter Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VF Damper Diode Turn On Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=300mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=5A
IC=5A, IB=1.2A
IC=5A, IB=1.2A
IF = 4.5A
VCC=200V, IC=4A, RL=50
IB1=1.0A, IB2= - 2.0A
Min.
40
6
7
4.5
Typ.
Max.
1
10
200
Units
mA
µA
mA
V
7.5
5V
1.5 V
2V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ.
Max.
2.5
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, October 2001

1 Page





FJAF6808D pdf, ピン配列
Typical Characteristics (Continued)
10
V = 200V,
CC
I = 4A, I = - 2A
C B2
1
tSTG
tF
0.1
0.1
1 10
IB1 [A], FORWARD BASE CURRENT
100
Figure 7. Resistive Load Switching Time
25
R = 0, I = 15A
B2 B1
V
CC
=
30V,
L
=
200µH
20
15
10
VBE(off) = -6V
5
VBE(off) = -3V
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC [oC], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
10
VCC = 200V,
IB1 = 1A,IB2 = - 2A
tSTG
tF
1
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 8. Resistive Load Switching Time
100
IC (Pulse)
10
IC (DC)
t = 100ms
1
t = 1ms
0.1
TC = 25oC
Single Pulse
0.01
1
10
100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
10000
Figure 10. Forward Bias Safe Operating Area
Rev. A, October 2001


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部品番号部品説明メーカ
FJAF6808D

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor
Fairchild Semiconductor


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