FGB40N6S2 Datasheet PDF - Fairchild Semiconductor
| Part Number | FGB40N6S2 | |
| Description | 600V/ SMPS II Series N-Channel IGBT | |
| Manufacturers | Fairchild Semiconductor | |
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August 2003
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49438
Features
• 100kHz Operation at 390V, 24A
• 200kHZ Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 35nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
• Low Conduction Loss
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
COLLECTOR
(Back-Metal)
GG
E
COLLECTOR
(Flange)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
75 A
IC110
Collector Current Continuous, TC = 110°C
35 A
ICM Collector Current Pulsed (Note 1)
180 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
100A at 600V
EAS Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V
260 mJ
PD Power Dissipation Total TC = 25°C
290 W
Power Dissipation Derating TC > 25°C
2.33 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
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Typical Performance Curves TJ = 25°C unless otherwise noted
200
DUTY CYCLE < 0.5%, VCE = 10V
175 PULSE DURATION = 250µs
150
125
100
75
TJ = 25oC
50
TJ = 125oC
25
TJ = -55oC
0
3 4 5 6 7 8 9 10 11
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
12
16
IG(REF) = 1mA, RL = 15Ω
14
12
VCE = 600V
10
VCE = 400V
8
6
4
VCE = 200V
2
0
0 5 10 15 20 25
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
30
2.4
RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V
2.0 ETOTAL = EON2 + EOFF
100
TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
35
1.6
ICE = 40A
1.2
0.8
ICE = 20A
0.4
ICE = 10A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 15. Total Switching Loss vs Case
Temperature
3.0
FREQUENCY = 1MHz
2.5
10
ICE = 40A
1 ICE = 20A
ICE = 10A
0.1
1.0
10 100
RG, GATE RESISTANCE (Ω)
1000
Figure 16. Total Switching Loss vs Gate
Resistance
4.0
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
3.6
2.0
CIES
1.5
1.0
COES
0.5
0.0
0
CRES
20 40 60 80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
Figure 17. Capacitance vs Collector to Emitter
Voltage
3.2
2.8
ICE = 40A
2.4
ICE = 20A
2.0
1.6
6
ICE = 10A
7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
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