3SK317 Datasheet PDF - Hitachi Semiconductor
| Part Number | 3SK317 | |
| Description | Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier | |
| Manufacturers | Hitachi Semiconductor | |
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3SK317
Silicon N-Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
Features
• Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
• High power gain characteristics ;
(PG = 27.6 dB typ. at f = 200 MHz)
Outline
Note: Marking is “ZR-”.
CMPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-778 (Z)
1st. Edition
Mar. 1999
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Noise Figure vs. Drain to Source Voltage
5
VG2S = 3V
4 ID = 10mA
f = 200MHz
3
2
1
0 2 4 6 8 10
Drain to source voltage VDS (V)
3SK317
Power Gain vs. Drain Current
20
16
12
8
VDS = 6V
VG2S = 3V
4 f = 900MHz
0 4 8 12 16 20
Drain current ID (mA)
5 Noise Figure vs. Drain Current
4
3
2
1 VDS = 6V
VG2S = 3V
f = 900MHz
0 4 8 12 16 20
Drain current I D (mA)
Power Gain vs. Drain to Source Voltage
20
16
12
8
VG2S = 3V
4 I D= 10mA
f = 900MHz
0 2 4 6 8 10
Drain to source voltage VDS (V)
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 3SK317 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 3SK317.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| 3SK317 | The function is Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier. Hitachi Semiconductor | |
| 3SK318 | The function is Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier. Hitachi Semiconductor | |
| 3SK319 | The function is Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier. Hitachi Semiconductor | |
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