DataSheet.jp

3LP01C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3LP01C
部品説明 Ultrahigh-Speed Switching Applications
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 

Total 4 pages
		

No Preview Available !

3LP01C Datasheet, 3LP01C PDF,ピン配置, 機能
Ordering number : ENN6645
3LP01C
P-Channel Silicon MOSFET
3LP01C
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Package Dimensions
unit : mm
2091A
[3LP01C]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Gate
2 : Source
3 : Drain
SANYO : CP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Ratings
--30
±10
--0.1
--0.4
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--100µA
VDS=--10V, ID=--50mA
min
--30
--0.4
80
Ratings
typ
110
max
--10
±10
--1.4
Unit
V
µA
µA
V
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90100 TS IM TA-1982No.6645-1/4

1 Page





ページ 合計 : 4 ページ
PDF
ダウンロード
[ 3LP01C.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
3LP01C

There is a function of Ultrahigh-Speed Switching Applications.

Sanyo Semicon Device
Sanyo Semicon Device
3LP01M

There is a function of P-Channel Silicon MOSFET.

Sanyo Semicon Device
Sanyo Semicon Device
3LP01N

There is a function of P-Channel Silicon MOSFET.

Sanyo Semicon Device
Sanyo Semicon Device
3LP01S

There is a function of P-Channel Small Signal MOSFET.

ON Semiconductor
ON Semiconductor

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap